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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20857-4E
FLASH MEMORY
CMOS
16M (2M x 8) BIT
MBM29LV017-80/-90/-12
s FEATURES
* Address specification is not necessary during command sequence * Single 3.0 V read, program and erase Minimizes system level power requirements * Compatible with JEDEC-standard commands Uses same software commands as E2PROMs * Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) * Minimum 100,000 program/erase cycles * High performance 80 ns maximum access time * Sector erase architecture Uniform sectors of 64K bytes each Any combination of sectors can be concurrently erased. Also supports full chip erase * Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector * Embedded programTM Algorithms Automatically programs and verifies data at specified address * Data Polling and Toggle Bit feature for detection of program or erase cycle completion * Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion * Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode * Low VCC write inhibit 2.5 V * Hardware RESET pin Resets internal state machine to the read mode * Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device * Sector protection Hardware method disables any combination of sectors from program or erase operations * Sector Protection set function by Extended sector protect command * Temporary sector unprotection Temporary sector unprotection via the RESET pin * In accordance with CFI (Common Flash Memory Interface)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
MBM29LV017-80/-90/-12
s PACKAGE
40-pin plastic TSOP (I)
Marking Side
40-pin plastic TSOP (I)
Marking Side
(FPT-40P-M06)
(FPT-40P-M07)
48-pin plastic FBGA
(BGA-48P-M03) (BGA-48P-M13)
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MBM29LV017-80/-90/-12
s GENERAL DESCRIPTION
The MBM29LV017 is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each. The 2M bytes of data is divided into 32 sectors of 64K bytes of flexible erase capability. The 8 bits of data will appear on DQ0 to DQ7. The MBM29LV017 is offered in a 40-pin TSOP (I), 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29LV017 offers access times of 80 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29LV017 is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29LV017 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margins. Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.) The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV017 is erased when shipped from the factory. The MBM29F017A device also features hardware sector group protection. This feature will disable both program and erase operations in any combination of eight sectior groups of memory. A sector group consists of four adjacect sectors grouped in the following pattern: sectors 0-3, 4-7, 8-11, 12-15, 16-19, 20-23, 24-27, and 28-31. Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of time to read data from or program data to a mom-busy sector. Thus, true background erase can be achieved. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been comleted, the device internally resets to the read mode. The MBM29LV017 also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read mode and will have erroneous data stored in the address locations being programmed or erased. These locations need re-writing after the Reset. Resetting the device enables the system's microprocessor to read the boot-up firmware from the Flash memory. Fujitsu's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29LV017 memory electrically erases all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte at a time using the EPROM programming mechanism of hot electron injection. 3
MBM29LV017-80/-90/-12
s FLEXIBLE SECTOR-ERASE ARCHITECTURE
* Thirty two 64K bytes sectors. * A sector group each of which consists of 4 adjacent sectors in the following pattern: sectors 0-3, 4-7, 8-11, 12-15, 16-19, 20-23, 24-27, and 28-31. * Individual-sector or multiple-sector erase capability. * Sector group protection is user-definable. SA31 SA30 SA29 SA28 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 1FFFFFH 1EFFFFH 1DFFFFH 1CFFFFH 1BFFFFH 1AFFFFH 19FFFFH 18FFFFH 17FFFFH 16FFFFH 15FFFFH 14FFFFH 13FFFFH 12FFFFH 11FFFFH 10FFFFH 32 Sectors Total 0FFFFFH 0EFFFFH 0DFFFFH 0CFFFFH 0BFFFFH 0AFFFFH 09FFFFH 08FFFFH 07FFFFH 06FFFFH 05FFFFH 04FFFFH SA3 SA2 SA1 SA0 64 Kbytes 64 Kbytes 64 Kbytes 64 Kbytes 03FFFFH 02FFFFH 01FFFFH 00FFFFH 000000H Sector Group 0 Sector Group 7
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MBM29LV017-80/-90/-12
s PRODUCT LINE UP
Part No. VCC = 3.3 V Ordering Part No. VCC = 3.0 V Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns)
+0.3 V -0.3 V +0.6 V -0.3 V
MBM29LV017 -80 -- 80 80 30 -- -90 90 90 35 -- -12 120 120 50
s BLOCK DIAGRAM
RY/BY Buffer VCC VSS
DQ0 to DQ7 RY/BY
Erase Voltage Generator
Input/Output Buffers
WE
State Control
RESET
Command Register
Program Voltage Generator
CE OE
Chip Enable Output Enable Logic
STB
Data Latch
STB
Y-Decoder
Y-Gating
Low VCC Detector
Timer for Program/Erase
Address Latch
X-Decoder
Cell Matrix
A0 to A20
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MBM29LV017-80/-90/-12
s CONNECTION DIAGRAMS
TSOP (I) A16 A15 A14 A13 A12 A11 A9 A8 WE RESET N.C. RY/BY A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
(Marking Side)
MBM29LV017 Standard Pinout
40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21
A17 VSS A20 A19 A10 DQ7 DQ6 DQ5 DQ4 VCC VCC N.C. DQ3 DQ2 DQ1 DQ0 OE VSS CE A0
FPT-40P-M06
A1 A2 A3 A4 A5 A6 A7 A18 RY/BY N.C. RESET WE A8 A9 A11 A12 A13 A14 A15 A16
20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1
(Marking Side)
MBM29LV017 Reverse Pinout
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
A0 CE VSS OE DQ0 DQ1 DQ2 DQ3 N.C. VCC VCC DQ4 DQ5 DQ6 DQ7 A10 A19 A20 VSS A17
FPT-40P-M07
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MBM29LV017-80/-90/-12
FBGA
(Top View)
Marking side
A1 B1 C1 D1 E1 F1 G1 H1 A2 B2 C2 D2 E2 F2 G2 H2 A3 B3 C3 D3 E3 F3 G3 H3 A4 B4 C4 D4 E4 F4 G4 H4 A5 B5 C5 D5 E5 F5 G5 H5 A6 B6 C6 D6 E6 F6 G6 H6
BGA-48P-M03 BGA-48P-M13
A1 B1 C1 D1 E1 F1 G1 H1
A3 A4 A2 A1 A0 CE OE VSS
A2 B2 C2 D2 E2 F2 G2 H2
A7 A18 A6 A5 DQ0 N.C. N.C. DQ1
A3 B3 C3 D3 E3 F3 G3 H3
RY/BY N.C. N.C. N.C. DQ2 DQ3 VCC N.C.
A4 B4 C4 D4 E4 F4 G4 H4
WE RESET N.C. N.C. DQ5 N.C. VCC DQ4
A5 B5 C5 D5 E5 F5 G5 H5
A9 A8 A11 A12 A19 A10 DQ6 DQ7
A6 B6 C6 D6 E6 F6 G6 H6
A14 A13 A15 A16 A17 N.C. A20 VSS
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MBM29LV017-80/-90/-12
s LOGIC SYMBOL
Table 1 MBM29LV017 Pin Configuration Pin A0 to A20
21 A0 to A20 DQ0 to DQ7 CE OE WE RESET RY/BY 8
Function Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Ready/Busy Output Hardware Reset Pin/ Temporary Sector Unprotection Pin Not Connected Internally Device Ground Device Power Supply
DQ0 to DQ7 CE OE WE RY/BY RESET N.C. VSS VCC
Table 2 Operation Auto-Select Manufacture Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write (Program/Erase) Enable Sector Protection (2), (4) Verify Sector Protection (2), (4) Temporary Sector Unprotection (5) Reset (Hardware)/Standby CE L L L H L L L L X X
MBM29LV017 User Bus Operation OE L L L X H H VID L X X H X X WE H H H X H L A0 L H A0 X X A0 L L X X A1 L L A1 X X A1 H H X X A6 L L A6 X X A6 L L X X A9 VID VID A9 X X A9 VID VID X X A10 L L A10 X X A10 X L X X DQ0 to DQ7 RESET Code Code DOUT HIGH-Z HIGH-Z DIN X Code X HIGH-Z H H H H H H H H VID L
Legend: L = VIL, H = VIH, X = VIL or VIH.
= pulse input. See DC Characteristics for voltage levels.
Notes: 1. Manufacturer and device codes may also be accessed via a command register write sequence. See Table 6. 2. Refer to the section on Sector Protection. 3. WE can be VIL if OE is VIL, OE at VIH initiates the write operations. 4. VCC = 3.3 V 10% 5. It is also used for the extended sector protection. 8
MBM29LV017-80/-90/-12
s ORDERING INFORMATION
Standard Products
Fujitsu standard products are available in several packages. The order number is formed by a combination of:
MBM29LV017
-80 PTN
PACKAGE TYPE PTN = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout PTR = 40-Pin Thin Small Outline Package (TSOP) Reverse Pinout PBT= 48-ball Fine Pich Ball Grid Array Package (FBGA:BGA-48P-M03) PBT-SF2= 48-ball Fine Pich Ball Grid Array Package (FBGA:BGA-48P-M13) SPEED OPTION See Product Selector Guide
DEVICE NUMBER/DESCRIPTION MBM29LV017 16 Mega-bit (2M x 8-Bit) CMOS Flash Memory 3.0 V-only Read, Write, and Erase 64K Bytes (32 Sectors)
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MBM29LV017-80/-90/-12
s FUNCTIONAL DESCRIPTION
Read Mode
The MBM29LV017 has two control functions which must be satisfied in order to obtain data at the outputs. CE is the power control and should be used for a device selection. OE is the output control and should be used to gate data to the output pins if a device is selected. Address access time (tACC) is equal to the delay from stable addresses to valid output data. The chip enable access time (tCE) is the delay from stable addresses and stable CE to valid data at the output pins. The output enable access time is the delay from the falling edge of OE to valid data at the output pins. (Assuming the addresses have been stable for at least tACC - tCE time.) See Figure 5.1 for timing specifications.
Standby Mode
There are two ways to implement the standby mode on the MBM29LV017 device, one using both the CE and RESET pins; the other via the RESET pin only. When using both pins, a CMOS standby mode is achieved with CE and RESET inputs both held at VCC 0.3 V. Under this condition the current consumed is less than 5 A max. During Embedded Algorithm operation, VCC Active current (ICC2) is required even CE = "H". The device can be read with standard access time (tCE) from either of these standby modes. When using the RESET pin only, a CMOS standby mode is achieved with RESET input held at VSS 0.3 V (CE = "H" or "L"). Under this condition the current is consumed is less than 5 A max. Once the RESET pin is taken high, the device requires tRH of wake up time before outputs are valid for read access. In the standby mode the outputs are in the high impedance state, independent of the OE input.
Automatic Sleep Mode
There is a function called automatic sleep mode to restrain power consumption during read-out of MBM29LV017 data. This mode can be used effectively with an application requested low power consumption such as handy terminals. To activate this mode, MBM29LV017 automatically switchs itself to low power mode when MBM29LV017 addresses remain stably during access time of 150 ns. It is not necessary to control CE, WE, and OE on the mode. Under the mode, the current consumed is typically 1 A (CMOS level). Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system.
Output Disable
With the OE input at a logic high level (VIH), output from the device is disabled. This will cause the output pins to be in a high impedance state.
Autoselect
The autoselect mode allows the reading out of a binary code from the device and will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional over the entire temperature range of the device. To activate this mode, the programming equipment must force VID (11.5 V to 12.5 V) on address pin A9. Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL to VIH. All addresses are DON'T CARES except A0, A1, A6, and A10. (See Table 3.1.)
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MBM29LV017-80/-90/-12
The manufacturer and device codes may also be read via the command register, for instances when the MBM29LV017 is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 6. (Refer to Autoselect Command section.) Byte 0 (A0 = VIL) represents the manufacture's code (Fujitsu = 04H) and byte 1 (A0 = VIH) represents the device identifier code MBM29LV017 = C8H. All identifiers for manufactures and device will exhibit odd parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the autoselect, A1 must be VIL. (See Tables 3.1 and 3.2.) In order to determine which sectors are write protected, A1 must be at VIH while running through the sector addresses; if the selected sector is protected, a logical `1' will be output on DQ0 (DQ0 = 1). Table 3.1 MBM29LV017 Sector Protection Verify Autoselect Code Type Manufacture's Code Device Code MBM29LV017 A16 to A20 X X Sector Addresses A10 VIL VIL VIL A6 VIL VIL VIL A1 VIL VIL VIH A0 VIL VIH VIL Code (HEX) 04H C8H 01H*1
Sector Protection
*1: Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses. Table 3.2 Expanded Autoselect Code Table Type Manufacture's Code Device Code MBM29LV017 Code 04H C8H 01H DQ7 0 1 0 DQ6 0 1 0 DQ5 0 0 0 DQ4 0 0 0 DQ3 0 1 0 DQ2 1 0 0 DQ1 0 0 0 DQ0 0 0 1
Sector Protection
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MBM29LV017-80/-90/-12
Table 4 Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 A20 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A19 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 A18 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 Sector Address Tables A17 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 A16 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Address Range 000000H to 00FFFFH 010000H to 01FFFFH 020000H to 02FFFFH 030000H to 03FFFFH 040000H to 04FFFFH 050000H to 05FFFFH 060000H to 06FFFFH 070000H to 07FFFFH 080000H to 08FFFFH 090000H to 09FFFFH 0A0000H to 0AFFFFH 0B0000H to 0BFFFFH 0C0000H to 0CFFFFH 0D0000H to 0DFFFFH 0E0000H to 0EFFFFH 0F0000H to 0FFFFFH 100000H to 10FFFFFH 110000H to 11FFFFH 120000H to 12FFFFH 130000H to 13FFFFH 140000H to 14FFFFH 150000H to 15FFFFH 160000H to 16FFFFH 170000H to 17FFFFH 180000H to 18FFFFH 190000H to 19FFFFH 1A0000H to 1AFFFFH 1B0000H to 1BFFFFH 1C0000H to 1CFFFFH 1D0000H to 1DFFFFH 1E0000H to 1EFFFFH 1F0000H to 1FFFFFH
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MBM29LV017-80/-90/-12
Write
Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The command register is written by bringing WE to VIL, while CE is at VIL and OE is at VIH. Addresses are latched on the falling edge of WE or CE, whichever happens later; while data is latched on the rising edge of WE or CE, whichever happens first. Standard microprocessor write timings are used. Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters.
Sector Protection
The MBM29LV017 features hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 31). The sector protection feature is enabled using programming equipment at the user's site. The device is shipped with all sectors unprotected. To activate this mode, the programming equipment must force VID on address pin A9 and control pin OE, (suggest VID = 11.5 V), CE = VIL, A0 = A6 = VIL, and A1 = VIH. The sector addresses (A20, A19, A18, A17,and A16) should be set to the sector to be protected. Tables 4 and 5 define the sector address for each of the thirty two (32) individual sectors. Programming of the protection circuitry begins on the falling edge of the WE pulse and is terminated with the rising edge of the same. Sector addresses must be held constant during the WE pulse. See figures 13 and 21 for sector protection waveforms and algorithm. To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9 with CE and OE at VIL and WE at VIH. Scanning the sector addresses (A20, A19, A18, A17,and A16) while (A10, A6, A1, A0) = (0, 0, 1, 0) will produce a logical "1" code at device output DQ0 for a protected sector. Otherwise the devices will read 00H for unprotected sector. In this mode, the lower order addresses, except for A0, A1, A6, and A10 are DON'T CARES. Address locations with A1 = VIL are reserved for Autoselect manufacturer and device codes. It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing a read operation at the address location XX02H, where the higher order addresses (A20, A19, A18, A17,and A16). are the sector address will produce a logical "1" at DQ0 for a protected sector. See Tables 3.1 and 3.2 for Autoselect codes.
Temporary Sector Unprotection
This feature allows temporary unprotection of previously protected sectors of the MBM29LV017 device in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage (12 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sectors will be protected again. See figure 15 and 22.
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MBM29LV017-80/-90/-12
Table 5 Command Sequence (Notes 1, 2, 3) Read/Reset (Note 5) Read/Reset (Note 5) Autoselect Byte Program (Notes 3, 4) Chip Erase Sector Erase (Note 3) Sector Erase Suspend Sector Erase Resume MBM29LV017 Standard Command Definitions
Second Bus First Bus Third Bus Fourth Bus Fifth Bus Sixth Bus Bus Write Write Cycle Write Cycle Read/Write Write Cycle Write Cycle Write Cycle Cycle Cycles Req'd Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data 1 3 3 4 6 6 1 1 XXXH F0H -- -- -- -- -- RA -- PA -- RD -- PD -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- --
XXXH AAH XXXH 55H XXXH F0H XXXH AAH XXXH 55H XXXH 90H XXXH AAH XXXH 55H XXXH A0H
XXXH AAH XXXH 55H XXXH 80H XXXH AAH XXXH 55H XXXH 10H XXXH AAH XXXH 55H XXXH 80H XXXH AAH XXXH 55H XXXH B0H XXXH 30H -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- SA -- -- 30H -- --
Notes: 1. Address bit = X = "H" or "L". 2. Bus operations are defined in Table 2. 3. RA =Address of the memory location to be read. PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse. SA =Address of the sector to be erased. The combination of A20, A19, A18, A17, and A16 will uniquely select any sector. 4. RD =Data read from location RA during read operation. PD =Data to be programmed at location PA. Data is latched on the rising edge of WE. 5. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the devices to read mode. Table 6 defines the valid register command sequences. Note that the Erase Suspend (B0H) and Erase Resume (30H) commands are valid only while the sector Erase operation is in progress. Moreover, both Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that commands are always written at DQ0 to DQ7 bits are ignored.
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MBM29LV017-80/-90/-12
Table 6 Command Sequence Fast Mode Set Fast Program *1 Fast Mode Reset*1 Query Command *2 Extended Sector Protection*3 Bus Write Cycles Req'd 3 2 2 2 4 MBM29LV017 Extended Command Definitions First Bus Write Cycle Addr XXXH XXXH XXXH XXH XXXH Data AAH A0H 90H 98H 60H Second Bus Write Cycle Addr XXXH PA -- SPA Data 55H PD -- 60H Third Bus Write Cycle Addr XXXH -- -- -- SPA Data 20H -- -- -- 40H Fourth Bus Read Cycle Addr -- -- -- -- SPA Data -- -- -- -- SD
XXXH F0H *4
SPA: Sector address to be protected. Set sector address (SA) and (A10, A6, A1, A0) = (0, 0, 1, 0). SD: Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector addresses. *1: *2: *3: *4: This command is valid while Fast Mode. Addresses from system set to A0 to A6. The other address are "DON'T CARES". This command is valid while VID = RESET. The data "00H" is also acceptable.
Read/Reset Command
The read or reset operation is initiated by writing the Read/Reset command sequence into the command register. Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the command register contents are altered. The devices will automatically power-up in the read/reset state. In this case, a command sequence is not required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read Characteristics and Waveforms for the specific timing parameters.(See Figures 5.1 and 5.2.)
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such, manufacture and device codes must be accessible while the device resides in the target system. PROM programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high voltage onto the address lines is not generally desired system design practice. The device contains an Autoselect command operation to supplement traditional PROM programming methodology. The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read cycle from address X001H returns the device code (MBM29LV017 = C8H). (See Tables 3.1 and 3.2.) All manufacturer and device codes will exhibit odd parity with the MSB (DQ7) defined as the parity bit. Sector state (protection or unprotection) will be informed address X0002H. Scanning the sector addresses (A20, A19, A18, A17, A16) while (A10, A6, A1, A0) = (0, 0, 1, 0) will produce a logical "1" at device output DQ0 for a protected sector. The programming verification should be perform margin mode on the protected sector. (See Table 2.) To terminate the operation, it is necessary to write the Read/Reset command sequence into the register, and also to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence. 15
MBM29LV017-80/-90/-12
Byte Programming
The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two "unlock" write cycles. These are followed by the program set-up command and data write cycles. Addresses are latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming. Upon executing the Embedded Program Algorithm command sequence, the system is not required to provide further controls or timings. The device will automatically provide adequate internally generated program pulses and verify the programmed cell margin. The automatic programming operation is completed when the data on DQ7 is equivalent to data written to this bit at which time the device returns to the read mode and addresses are no longer latched. (See Table 8, Hardware Sequence Flags.) Therefore, the device requires that a valid address to the device be supplied by the system at this particular instance of time. Hence, Data Polling must be performed at the memory location which is being programmed. Any commands written to the chip during this period will be ignored. If hardware reset occurs during the programming operation, it is impossible to guarantee the data are being written. Programming is allowed in any sequence and across sector boundaries. Beware that a data "0" cannot be programmed back to a "1". Attempting to do so may either hang up the device (exceed timing limits), or result in an apparent success according to the data polling algorithm but a read from read/reset mode will show that the data is still "0". Only erase operations can convert "0"s to "1"s. Figure 17 illustrates the Embedded ProgramTM Algorithm using typical command strings and bus operations.
Chip Erase
Chip erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command. Two more "unlock" write cycles are then followed by the Chip Erase command. Chip erase does not require the user to program the device prior to erase. Upon executing the Embedded Erase Algorithm command sequence the device will automatically program and verify the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data on DQ7 is "1" (See Write Operation Status section.) at which time the device returns to read the mode. Figure 18 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by writing the "set-up" command. Two more "unlock" write cycles are then followed by the Sector Erase command. The sector address (any address location within the desired sector) is latched on the falling edge of WE, while the command (Data = 30H) is latched on the rising edge of WE. After time-out of 50 s from the rising edge of the last Sector Erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 6. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than 50 s, otherwise that command will not be accepted and erasure will start. It is recommended that processor interrupts be disabled during this time to guarantee this condition. The interrupts can be re-enabled after the last Sector Erase command is written. A time-out of 50 s from the rising edge of the last WE will initiate the execution of the Sector Erase command(s). If another falling edge of the WE occurs within the 50 s time-out window the timer is reset. (Monitor DQ3 to determine if the 16
MBM29LV017-80/-90/-12
sector erase timer window is still open, see section DQ3, Sector Erase Timer.) Any command other than Sector Erase or Erase Suspend during this time-out period will reset the devices to the read mode, ignoring the previous command string. Resetting the devices once execution has begun will corrupt the data in that sector. In that case, restart the erase on those sectors and allow them to complete. (Refer to the Write Operation Status section for Sector Erase Timer operation.) Loading the sector erase buffer may be done in any sequence and with any number of sectors (0 to 31). Sector erase does not require the user to program the devices prior to erase. The device automatically programs all memory locations in the sector(s) to be erased prior to electrical erase. When erasing a sector or sectors the remaining unselected sectors are not affected. The system is not required to provide any controls or timings during these operations. The automatic sector erase begins after the 50 s time out from the rising edge of the WE pulse for the last sector erase command pulse and terminates when the data on DQ7 is "1" (See Write Operation Status section) at which time the device returns to the read mode. Data polling must be performed at an address within any of the sectors being erased. Multiple Sector Erase Time; [Sector Program Time (Preprogramming) + Sector Erase Time] x Number of Sector Erase. Figure 18 illustrates the Embedded EraseTM Algorithm using typical command strings and bus operations.
Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads from or program to a sector not being erased. This command is applicable ONLY during the Sector Erase operation which includes the time-out period for sector erase. The Erase Suspend command will be ignored if written during the Chip Erase operation or Embedded Program Algorithm. Writting the Erase Suspend command during the Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command resumes the erase operation. The addresses are "DON'T CARES" when writing the Erase Suspend or Erase Resume commands. When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum of 20 s to suspend the erase operation. When the devices have entered the erase-suspended mode, the RY/ BY output pin and the DQ7 bit will be at logic "1", and DQ6 will stop toggling. The user must use the address of the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further writes of the Erase Suspend command are ignored. When the erase operation has been suspended, the device defaults to the erase-suspend-read mode. Reading data in this mode is the same as reading from the standard read mode except that the data must be read from sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the device is in the erase-suspend-read mode will cause DQ2 to toggle. (See the section on DQ2.) After entering the erase-suspend-read mode, the user can program the device by writing the appropriate command sequence for Program. This Program mode is known as the erase-suspend-program mode. Again, programming in this mode is the same as programming in the regular Program mode except that the data must be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erasesuspended Program operation is detected by the RY/BY output pin, Data polling of DQ7, or the Toggle Bit (DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address while DQ6 can be read from any address. To resume the operation of Sector Erase, the Resume command (30H) should be written. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
17
MBM29LV017-80/-90/-12
Extended Command
(1) Fast Mode MBM29LV017 has Fast Mode function. This mode dispenses with the initial two unlock cycles required in the standard program command sequence by writing Fast mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in normal command. (Do not write erase command in this mode.) The read operation is also executed after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command register. (Refer to the Figure 23 Extended algorithm.) The VCC active current is required even CE = VIH during Fast Mode. (2) Fast Programming During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program Algorithm is executed by writing program Setup command (A0H) and data write cycles (PA/PD). (Refer to the Figure 23 Extended algorithm.) (3) CFI (Common Flash Memory Interface) The CFI (Common Flash Memory Interface) specification outlines device and host system software interrogation handshake which allows specific vender-specified software algorithms to be used for entire families of device. This allows device-independent, JEDEC ID-independent, and forward- and backward-compatible software support for the specified flash device families. Refer to CFI specification in detail. The operation is initiated by writing the query command (98H) into the command register. Following the command write, a read cycle from specific address retrives device information. Refer to the CFI code table. To terminate operation, it is necessary to write the Read/Reset command sequence into the register. (4) Extended Sector Protection In addition to normal sector protection, the MBM29LV017 has Extended Sector Protection as extended function. This function enable to protect sector by forcing VID on RESET pin and write a command sequence. Unlike conventional procedure, it is not necessary to force VID and control timing for control pins. The only RESET pin requires VID for sector protection in this mode. The extended sector protect requires VID on RESET pin. With this condition, the operation is initated by writing the Setup command (60H) into the command register. Then, the sector addresses pins (A20, A19, A18, A17, and A16) and (A10, A6, A1, A0) = (0, 0, 1, 0) should be set to the sector to be protected (recommend to set VIL for the other addresses pins), and write extended sector protect command (60H). A sector is typically protected in 150 s. To verify programming of the protection cicuitry, the sector addresses pins (A20, A19, A18, A17, and A16) and (A10, A6, A1, A0) = (0, 0, 1, 0) should be set and write a command (40H). Following the command write, a logical "1" at device output DQ0 will produce for protected sector in the read operation. If the output data is logical "0", please repeat to write extended sector protect command (60H) again. To terminate the opetation, it is necessary to set RESET pin to VIH.
18
MBM29LV017-80/-90/-12
Write Operation Status
Table 7 Status Embedded Program Algorithm Embedded/Erase Algorithm In Progress Erase Suspend Read Erase Suspended Sector) Erase Erase Suspend Read Suspend (Non-Erase Suspended Sector) Mode Erase Suspend Program (Non-Erase Suspended Sector) Embedded Program Algorithm Exceeded Time Limits Embedded/Erase Algorithm Erase Suspend Program (Non-Erase Suspended Sector) Hardware Sequence Flags DQ7 DQ7 0 1 Data DQ7 DQ7 0 DQ7 DQ6 Toggle Toggle 1 Data Toggle (Note 1) Toggle Toggle Toggle DQ5 0 0 0 Data 0 1 1 1 DQ3 0 1 0 Data 0 0 1 0 DQ2 1 Toggle Toggle Data 1 (Note 2) 1 N/A N/A
Notes: 1. Performing successive read operations from any address will cause DQ6 to toggle. 2. Reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. 3. DQ0 and DQ1 are reserve pins for future use. 4. DQ4 is Fujitsu internal use only.
19
MBM29LV017-80/-90/-12
DQ7 Data Polling The MBM29LV017 device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read the device will produce the complement of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to read the device will produce the true data last written to DQ7. During the Embedded Erase Algorithm, an attempt to read the device will produce a "0" at the DQ7 output. Upon completion of the Embedded Erase Algorithm an attempt to read the device will produce a "1" at the DQ7 output. The flowchart for Data Polling (DQ7) is shown in Figure 19. For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. Data Polling must be performed at sector address within any of the sectors being erased and not a protected sector. Otherwise, the status may not be valid. Once the Embedded Algorithm operation is close to being completed, the MBM29LV017 data pins (DQ7) may change asynchronously while the output enable (OE) is asserted low. This means that the device is driving status information on DQ7 at one instant of time and then that byte's valid data at the next instant of time. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the Embedded Algorithm operation and DQ7 has a valid data, the data outputs on DQ0 to DQ6 may be still invalid. The valid data on DQ0 to DQ7 will be read on the successive read attempts. The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out. (See Table 8.) See Figure 9 for the Data Polling timing specifications and diagrams. DQ6 Toggle Bit I The MBM29LV017 also features the "Toggle Bit I" as a method to indicate to the host system that the Embedded Algorithms are in progress or completed. During an Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ6 toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will be read on the next successive attempts. During programming, the Toggle Bit I is valid after the rising edge of the fourth WE pulse in the four write pulse sequence. For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth WE pulse in the six write pulse sequence. The Toggle Bit I is active during the sector time out. In programming, if the sector being written to is protected, the toggle bit will toggle for about 2 s and then stop toggling without the data having changed. In erase, the device will erase all the selected sectors except for the ones that are protected. If all selected sectors are protected, the chip will toggle the toggle bit for about 50 s and then drop back into read mode, having changed none of the data. Either CE or OE toggling will cause the DQ6 to toggle. In addition, an Erase Suspend/Resume command will cause the DQ6 to toggle. See Figure 10 and Figure 20 for the Toggle Bit I timing specifications and diagrams.
20
MBM29LV017-80/-90/-12
DQ5 Exceeded Timing Limits DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse count). Under these conditions DQ5 will produce a "1". This is a failure condition which indicates that the program or erase cycle was not successfully completed. Data Polling DQ7, DQ6 is the only operating function of the device under this condition. The CE circuit will partially power down the device under these conditions (to approximately 2 mA). The OE and WE pins will control the output disable functions as described in Table 2. The DQ5 failure condition may also appear if a user tries to program a non blank location without erasing. In this case the device locks out and never completes the Embedded Algorithm operation. Hence, the system never reads a valid data on DQ7 bit and DQ6 never stops toggling. Once the device has exceeded timing limits, the DQ5 bit will indicate a "1" Please note that this is not a device failure condition since the device was incorrectly used. If this occurs, reset the device with command sequence. DQ3 Sector Erase Timer After the completion of the initial Sector Erase command sequence the sector erase time-out will begin. DQ3 will remain low until the time-out is complete. Data Polling and Toggle Bit are valid after the initial Sector Erase command sequence. If Data Polling or the Toggle Bit I indicates the device has been written with a valid erase command, DQ3 may be used to determine if the sector erase timer window is still open. If DQ3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by Data Polling or Toggle Bit I. If DQ3 is low ("0"), the device will accept additional Sector Erase commands. To insure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 were high on the second status check, the command may not have been accepted. See Table 8: Hardware Sequence Flags. DQ2 Toggle Bit II This Toggle Bit II, along with DQ6, can be used to determine whether the devices are in the Embedded Erase Algorithm or in Erase Suspend. Successive reads from the erasing sector will cause DQ2 to toggle during the Embedded Erase Algorithm. If the devices are in the erase-suspended-read mode, successive reads from the erase-suspended sector will cause DQ2 to toggle. When the devices are in the erase-suspended-program mode, successive reads from the byte address of the non-erase suspended sector will indicate a logic "1" at the DQ2 bit. DQ6 is different from DQ2 in that DQ6 toggles only when the standard program or Erase, or Erase Suspend Program operation is in progress. For example, DQ2 and DQ6 can be used together to determine the erase-suspend-read mode. (DQ2 toggles while DQ6 does not.) See also above Table 9 and Figure 16. Furthermore, DQ2 can also be used to determine which sector is being erased. When the devices are in the erase mode, DQ2 toggles if this bit is read from the erasing sector.
21
MBM29LV017-80/-90/-12
Table 8 Mode Program Erase Erase-Suspend Read (Erase-Suspended Sector) (Note 1) Erase-Suspend Program DQ7 DQ7 0 1 DQ7
Toggle Bit Status DQ6 Toggle Toggle 1 Toggle (Note 1) DQ2 1 Toggle Toggle 1 (Note 2)
Notes: 1. Performing successive read operations from any address will cause DQ6 to toggle. 2. Reading the address being programmed while in the erase-suspend program mode will indicate logic "1" at the DQ2 bit. However, successive reads from the erase-suspended sector will cause DQ2 to toggle. RY/BY Ready/Busy Pin The MBM29LV017 provides a RY/BY open-drain output pin as a way to indicate to the host system that the Embedded Algorithms are either in progress or has been completed. If the output is low, the device is busy with either a program or erase operation. If the output is high, the device is ready to accept any read/write or erase operation. When the RY/BY pin is low, the device will not accept any additional program or erase commands with the exception of the Erase Suspend command. If the MBM29LV017 is placed in an Erase Suspend mode, the RY/BY output will be high, by means of connecting with a pull up resistor to VCC. During programming, the RY/BY pin is driven low after the rising edge of the fourth WE pulse. During an erase operation, the RY/BY pin is driven low after the rising edge of the sixth WE pulse. The RY/BY pin will indicate a busy condition during the RESET pulse. See Figure 11 and 12 for a detailed timing diagram. The RY/BY pin is pulled high in stadby mode. Since this is an open-drain output, RY/BY pins can be tied together in parallel with a pull-up resistor to VCC. RESET Hardware Reset Pin The MBM29LV017 device may be reset by driving the RESET pin to VIL. The RESET pin has a pulse requirement and has to be kept low (VIL) for at least 500 ns in order to properly reset the internal state machine. Any operation in the process of being executed will be terminated and the internal state machine will be reset to the read mode tREADY after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the devices requires an additional tRH before it will allow read access. When the RESET pin is low, the device will be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please note that the RY/BY output signal should be ignored during the RESET pulse. See Figure 12 for the timing diagram. Refer to Temporary Sector Unprotection for additional functionality. If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the erasing sector(s) cannot be used.
22
MBM29LV017-80/-90/-12
Data Protection
The MBM29LV017 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transitions. During power up the device automatically resets the internal state machine in the Read mode. Also, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific multi-bus cycle command sequences. The devices also incorporates several features to prevent inadvertent write cycles resulting form VCC power-up and power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less than 2.3 V (typically 2.4 V). If VCC < VLKO, the command register is disabled and all internal program/erase circuits are disabled. Under this condition the device will reset to the Read mode. Subsequent writes will be ignored until the VCC level is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct to prevent unintentional writes when VCC is above 2.3 V. If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector(s) cannot be used.
Write Pulse "Glitch" Protection
Noise pulses of less than 5 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE = VIL, CE = VIH, or WE = VIH. To initiate a write cycle CE and WE must be a logical zero while OE is a logical one.
Power-up Write Inhibit
Power-up of the device with WE = CE = VIL and OE = VIH will not accept commands on the rising edge of WE. The internal state machine is automatically reset to the read mode on power-up.
23
MBM29LV017-80/-90/-12
Table 9 Description Query-unique ASCII string "QRY" Primary OEM Command Set 02h:AMD/FJ standard type Address for Primary Extended Table Alternate OEM Command Set (00H = not applicable) Address for Alternate OEM Extended Table VCC Min. (write/erase) D7 to D4: volt D3 to D0: 100 m volt VCC Max. (write/erase) D7 to D4: volt D3 to D0: 100 m volt VPP Min. voltage VPP Max. voltage Typical time-out per single byte/word write 2N s Typical time-out for Min. size buffer write 2N s Typical time-out per individual block erase 2N ms Typical time-out for full chip erase 2N ms Max. time-out for byte/word write 2N times typical Max. time-out for buffer write 2N times typical Max. time-out per individual block erase 2N times typical Max. time-out for full chip erase 2N times typical Device size = 2N byte Flash Device Interface description Max. number of byte in multi-byte write = 2N Number of Erase Block Regions within device 24 MBM29LV017 Common Flash Interface Code DQ0 to DQ7 Description 51H 52H Erase Block Region 1 Information 59H 02H 00H 40H 00H 00H 00H 00H 00H 27H Erase Block Region 4 Information 1CH 1DH 1EH 1FH 20H 21H 22H 23H 24H 25H 26H 27H 28H 29H 2AH 2BH 2CH 36H 00H 00H 04H 00H 0AH 00H 05H 00H 04H 00H 15H 00H 00H 00H 00H 04H Query-unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Address Sensitive Unlock 0 = Required 1 = Not Required Erase Suspend 0 = Not Supported 1 = To Read Only 2 = To Read & Write Sector Protection 0 = Not Supported X = Number of sectors in per group Sector Temporary Unprotection 00 = Not Supported 01 = Supported Erase Block Region 2 Information A0 to A6 2DH 2EH 2FH 30H 31H 32H 33H 34H 35H 36H 37H 38H 39H 3AH 3BH 3CH 40H 41H 42H 43H 44H 45H DQ0 to DQ7 00H 00H 40H 00H 01H 00H 20H 00H 00H 00H 80H 00H 1EH 00H 00H 01H 50H 52H 49H 31H 30H 00H
A0 to A6 10H 11H 12H 13H 14H 15H 16H 17H 18H 19H 1AH 1BH
Erase Block Region 3 Information
46H
02H
47H
01H
48H 49H 4AH 4BH 4CH
01H XXH XXH XXH XXH
Reserve
MBM29LV017-80/-90/-12
s ABSOLUTE MAXIMUM RATINGS
Storage Temperature .................................................................................................. -55C to +125C Ambient Temperature with Power Applied .................................................................. -40C to +85C Voltage with respect to Ground All pins except A9, OE, and RESET (Note 1) ............ -0.5 V to +VCC +0.5 V VCC (Note 1) ................................................................................................................ -0.5 V to +5.5 V A9, OE, and RESET (Note 2) ...................................................................................... -0.5 V to +13.0 V Notes: 1. Minimum DC voltage on input or l/O pins are -0.5 V. During voltage transitions, inputs may negative overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on output and l/O pins are VCC +0.5 V. During voltage transitions, outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns. 2. Minimum DC input voltage on A9, OE, and RESET pins are -0.5 V. During voltage transitions, A9, OE, and RESET pins may negative overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on A9, OE, and RESET pins are +13.0 V which may positive overshoot to 14.0 V for periods of up to 20 ns. Voltage difference between input voltage and supply voltage (VIN - VCC) do not exceed 9 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING RANGES
Ambient Temperature (TA) MBM29LV017-80......................................................................................-20C to +70C MBM29LV017-90/-12 ................................................................................-40C to +85C VCC Supply Voltages MBM29LV017-80......................................................................................+3.0 V to +3.6 V MBM29LV017-90/-12 ................................................................................+2.7 V to +3.6 V Operating ranges define those limits between which the functionality of the device is quaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.
25
MBM29LV017-80/-90/-12
s MAXIMUM OVERSHOOT
+0.6 V -0.5 V -2.0 V
20 ns
20 ns
20 ns
Figure 1
Maximum Negative Overshoot Waveform
20 ns
VCC +2.0 V VCC +0.5 V +2.0 V
20 ns 20 ns
Figure 2
Maximum Positive Overshoot Waveform 1
20 ns
+14.0 V +13.0 V VCC +0.5 V
20 ns 20 ns
Note : This waveform is applied for A9, OE, and RESET.
Figure 3
Maximum Positive Overshoot Waveform 2
26
MBM29LV017-80/-90/-12
s DC CHARACTERISTICS
Parameter Symbol ILI ILO ILIT ICC1 ICC2 ICC3 ICC4 Parameter Description Input Leakage Current Output Leakage Current A9, OE, RESET Inputs Leakage Current VCC Active Current (Note 1) CE = VIL, OE = VIH, f = 5 MHz VCC Active Current (Note 2) VCC Current (Standby) VCC Current during Reset (Standby, RESET) CE = VIL, OE = VIH VCC = VCC Max., CE = VCC 0.3 V, RESET = VCC 0.3 V VCC = VCC Max., RESET = VSS 0.3 V -- -- -- -- 15 35 5 5 mA mA A A Test Conditions VIN = VSS to VCC, VCC = VCC Max. VOUT = VSS to VCC, VCC = VCC Max. VCC = VCC Max., A9, OE, RESET = 12.5 V CE = VIL, OE = VIH, f = 10 MHz Min. -1.0 -1.0 -- -- Max. +1.0 +1.0 35 30 Unit A A A mA
ICC5
VCC = VCC Max., RESET = VCC 0.3 V, VCC Current (Automatic Sleep Mode) (Note 3) CE = VSS 0.3 V, VIN = VCC 0.3 V or VSS 0.3 V Input Low Level Input High Level Voltage for Autoselect, Sector Protection and Temporary Sector Unprotection (A9, OE, RESET) (Note 4) Output Low Voltage Level Output High Voltage Level -- --
--
5
A
VIL VIH
-0.5 2.0
0.6 VCC + 0.3
V V
VID
--
11.5
12.5
V
VOL VOH1 VOH2 VLKO Notes: 1. 2. 3. 4.
IOL = 4.0 mA, VCC = VCC Min. IOH = -2.0 mA, VCC = VCC Min. IOH = -100 A
-- 2.4 VCC - 0.4
0.45 -- -- 2.5
V V V V
Low VCC Lock-Out Voltage
--
2.3
The lCC current listed includes both the DC operating current and the frequency dependent component. lCC active while Embedded Erase or Embedded Program is in progress. Automatic sleep mode enables the low power mode when address remain stable for 150 ns. (VID - VCC) do not exceed 9 V.
27
MBM29LV017-80/-90/-12
s AC CHARACTERISTICS
* Read Only Operations Characteristics Parameter Symbols Description JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX -- Standar d tRC tACC tCE tOE tDF tDF tOH tREADY Read Cycle Time Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output HIGH-Z Output Enable to Output HIGH-Z Output Hold Time From Address, CE or OE, Whichever Occurs First RESET Pin Low to Read Mode -- CE = VIL OE = VIL OE = VIL -- -- -- -- -- Min. Max. Max. Max. Max. Max. Min. Max. Test Setup -80 (Note) 80 80 80 30 25 25 0 20 -90 (Note) 90 90 90 35 30 30 0 20 -12 (Note) 120 120 120 50 30 30 0 20 ns ns ns ns ns ns ns s MBM29LV017 Unit
Note: Test Conditions: Output Load:
1 TTL gate and 30 pF (MBM29LV017-80/-90) 1 TTL gate and 100 pF (MBM29LV017-12) Input rise and fall times: 5 ns Input pulse levels: 0.0 V to 3.0 V Timing measurement reference level Input: 1.5 V Output: 1.5 V
3.3 V IN3064 or Equivalent Device Under Test 6.2 k CL Diodes = IN3064 or Equivalent
2.7 k
Notes: CL = 30 pF including jig capacitance (MBM29LV017-80/-90) CL = 100 pF including jig capacitance (MBM29LV017-12) Figure 4 Test Conditions
28
MBM29LV017-80/-90/-12
* Write (Erase/Program) Operations Parameter Symbols Description JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX -- -- Standard tWC tAS tAH tDS tDH tOES tOEH Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Output Enable Hold Time Read Toggle and Data Polling Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Min. Typ. Typ. Max. Min. Min. Min. Min. Min. Min. Min. -80 80 0 45 35 0 0 0 10 0 0 0 0 0 0 35 35 25 25 8 1 30 50 4 100 4 4 0 200 -90 90 0 45 45 0 0 0 10 0 0 0 0 0 0 45 45 25 25 8 1 35 50 4 100 4 4 0 200 -12 120 0 50 50 0 0 0 10 0 0 0 0 0 0 50 50 30 30 8 1 50 50 4 100 4 4 0 200 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s sec ns s s s s s ns ns MBM29LV017 Unit
tGHWL tGHEL tELWL tWLEL tWHEH tEHWH tWLWH tELEH tWHWL tEHEL tWHWH1 tWHWH2 -- -- -- -- -- -- -- --
tGHWL tGHEL tCS tWS tCH tWH tWP tCP tWPH tCPH tWHWH1 tWHWH2 tEOE tVCS tVLHT tWPP tOESP tCSP tRB tRH
Read Recover Time Before Write (OE High to WE Low) Read Recover Time Before Write (OE High to CE Low) CE Setup Time WE Setup Time CE Hold Time WE Hold Time Write Pulse Width CE Pulse Width Write Pulse Width High CE Pulse Width High Programming Operation Sector Erase Operation (Note 1) Delay Time from Embedded Output Enable VCC Setup Time Voltage Transition Time (Note 2) Write Pulse Width (Note 2) OE Setup Time to WE Active (Note 2) CE Setup Time to WE Active (Note 2) Recover Time From RY/BY RESET Hold Time Before Read
(Continued)
29
MBM29LV017-80/-90/-12
(Continued)
Parameter Symbols Description JEDEC -- -- -- Standard tBUSY tVIDR tRP Program/Erase Valid to RY/BY Delay Max. Rise Time to VID (Note 2) RESET Pulse Width Min. Min. -80 90 500 500 -90 90 500 500 -12 90 500 500 ns ns ns MBM29LV017 Unit
Notes: 1. This does not include the preprogramming time. 2. This timing is for Sector Protection operation.
30
MBM29LV017-80/-90/-12
s SWITCHING WAVEFORMS
* Key to Switching Waveforms
WAVEFORM
INPUTS Must Be Steady May Change from H to L May Change from L to H "H" or "L": Any Change Permitted Does Not Apply
OUTPUTS Will Be Steady Will Be Change from H to L Will Be Change from L to H Changing, State Unknown Center Line is HighImpedance "Off" State
tRC
Addresses
Addresses Stable
tACC
CE
tOE tDF
OE
tOEH
WE
tCE tOH
Outputs
HIGH-Z
Output Valid
HIGH-Z
Figure 5.1
AC Waveforms for Read Operations
31
MBM29LV017-80/-90/-12
tRC
Addresses
tACC tRH
Addresses Stable
RESET
tOH
Outputs
HIGH-Z
Output Valid
Figure 5.2
AC Waveforms for Hardware Reset/Read Operations
32
MBM29LV017-80/-90/-12
3rd Bus Cycle Addresses
XXXH tWC tAS PA tAH
Data Polling
PA tRC
CE
tCS tCH tCE
OE
tGHWL tWP tWPH tWHWH1 tOE
WE
tDS tDH tDF tOH
Data
A0H
PD
DQ7
DOUT
DOUT
Notes: 1. 2. 3. 4. 5.
PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence.
Figure 6
AC Waveforms for Alternate WE Controlled Program Operations
33
MBM29LV017-80/-90/-12
3rd Bus Cycle
Data Polling PA tAS tAH PA
Addresses
XXXH tWC
WE
tWS tWH
OE
tGHEL tCP tCPH tWHWH1
CE
tDS tDH PD DQ7 DOUT
Data
A0H
Notes: 1. 2. 3. 4. 5.
PA is address of the memory location to be programmed. PD is data to be programmed at byte address. DQ7 is the output of the complement of the data written to the device. DOUT is the output of the data written to the device. Figure indicates last two bus cycles out of four bus cycle sequence.
Figure 7
AC Waveforms for Alternate CE Controlled Program Operations
34
MBM29LV017-80/-90/-12
Addresses
XXXH tWC
XXXH tAS tAH
XXXH
XXXH
XXXH
SA*
CE
tCS tCH
OE
tGHWL tWP tWPH
WE
tDS AAH tDH 55H 80H AAH 55H
30H for Sector Erase 10H
Data
tVCS
VCC
* : SA is the sector address for Sector Erase. Addresses = XXXH for Chip Erase.
Figure 8
AC Waveforms for Chip/Sector Erase Operations
35
MBM29LV017-80/-90/-12
CE
tCH
tOE
tDF
OE
tOEH
WE
tCE
* DQ7
Data DQ7 DQ7 = Valid Data
HighZ
tWHWH1 or 2
High-Z
DQ0 to DQ6
Data
DQ0 to DQ6 = Output Flag
DQ0 to DQ6
Valid Data
tEOE
* : DQ7 = Valid Data (The device has completed the Embedded operation.)
Figure 9
AC Waveforms for Data Polling during Embedded Algorithm Operations
CE
tOEH
WE
tOES
OE
tDH
*
DQ6 = Toggle DQ6 = Stop Toggling tOE DQ0 to DQ7 Data Valid
DQ6
Data
DQ6 = Toggle
* : DQ6 stops toggling. (The device has completed the Embedded operation.) Figure 10 AC Waveforms for Toggle Bit I during Embedded Algorithm Operations
36
MBM29LV017-80/-90/-12
CE
The rising edge of the last WE signal
WE
Entire programming or erase operations
RY/BY
tBUSY
Figure 11
RY/BY Timing Diagram during Program/Erase Operations
WE
RESET
tRP tRB
RY/BY
tREADY
Figure 12
RESET, RY/BY Timing Diagram
37
MBM29LV017-80/-90/-12
A20, A19, A18 A17, A16
SAX
SAY
A0
A1
A6, A10
12 V 3V A9 12 V 3V OE
tVLHT tOESP tWPP tVLHT tVLHT tVLHT
WE
tCSP
CE
Data
tVLHT tOE
01H
VCC
SAX: Sector Address for initial sector SAY : Sector Address for next sector
Figure 13
AC Waveforms for Sector Protection Timing Diagram
38
MBM29LV017-80/-90/-12
VCC
tVCS
RESET tVIDR Add
tVLHT
SPAX
SPAX
SPAY
A0
A1
A6
CE
OE TIME-OUT
WE
Data
60H
60H
40H tOE
01H
60H
SPAX: Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 150 s (min) Figure 14 Extended Sector Protection Timing Diagram
39
MBM29LV017-80/-90/-12
VCC tVCS VID 3V RESET CE
tVIDR tVLHT
3V
WE
tVLHT RY/BY
Program or Erase Command Sequence
tVLHT
Unprotection period
Figure 15
Temporary Sector Unprotection Timing Diagram
Enter Embedded Erasing WE
Erase Suspend Erase
Enter Erase Suspend Program Erase Suspend Program
Erase Resume Erase Suspend Read Erase Erase Complete
Erase Suspend Read
DQ6
DQ2 Toggle DQ2 and DQ6 with OE
Note: DQ2 is read from the erase-suspended sector. Figure 16 DQ2 vs. DQ6
40
MBM29LV017-80/-90/-12
EMBEDDED PROGRAM TM ALGORITHM
Start
Write Program Command Sequence (See Below)
Data Polling Device
No Verify Byte ? Yes No
Increment Address
Last Address ? Yes
Programming Completed
Program Command Sequence (Address/Command):
XXXH/AAH
XXXH/55H
XXXH/A0H
Program Address/Program Data
Figure 17
Embedded ProgramTM Algorithm
41
MBM29LV017-80/-90/-12
EMBEDDED PROGRAM TM ALGORITHM
Start
Write Erase Command Sequence (See Below) Data Polling or Toggle Bit from Device
No Data = FFH ? Yes Erasure Completed
Chip Erase Command Sequence (Address/Command): XXXH/AAH
Individual Sector/Multiple Sector Erase Command Sequence (Address/Command): XXXH/AAH
XXXH/55H
XXXH/55H
XXXH/80H
XXXH/80H
XXXH/AAH
XXXH/AAH
XXXH/55H
XXXH/55H
XXXH/10H
Sector Address/30H
Sector Address/30H
Additional sector erase commands are optional.
Sector Address/30H
Figure 18
Embedded EraseTM Algorithm
42
MBM29LV017-80/-90/-12
Start
Read Byte (DQ0 to DQ7) Addr. = VA
DQ7 = Data? No No DQ5 = 1? Yes Read Byte (DQ0 to DQ7) Addr. = VA
Yes
VA = Address for programming = Any of the sector addresses within the sector being erased during sector erase or multiple erases operation. = Any of the sector addresses within the sector not being protected during sector erase or multiple sector erases operation.
DQ7 = Data? * No Fail
Yes
Pass
* : DQ7 is rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5. Figure 19 Data Polling Algorithm
43
MBM29LV017-80/-90/-12
Start
Read Byte (DQ0 to DQ7) Addr. = "H" or "L"
No DQ6 = Toggle ? Yes No DQ5 = 1? Yes Read Byte (DQ0 to DQ7) Addr. = "H" or "L"
DQ6 = Toggle ?* Yes Fail
No
Pass
* : DQ6 is rechecked even if DQ5 = "1" because DQ6 may stop toggling at the same time as DQ5 changing to "1". Figure 20 Toggle Bit Algorithm
44
MBM29LV017-80/-90/-12
Start
Setup Sector Addr. (A20, A19, A18, A17, A16)
PLSCNT = 1
OE = VID, A9 = VID A6 = CE = VIL, RESET = VIH A0 = VIL, A1 = VIH
Activate WE Pulse Increment PLSCNT
Time out 100 s
WE = VIH, CE = OE = VIL (A9 should remain VID) Read from Sector ( A1 = VIH, A0 = VIL, Addr. = SA, A6 = VIL)* No No PLSCNT = 25? Yes Remove VID from A9 Write Reset Command Data = 01H? Yes Protect Another Sector? No Device Failed Remove VID from A9 Write Reset Command
Sector Protection Completed
Figure 21
Sector Protection Algorithm
45
MBM29LV017-80/-90/-12
Start
RESET = VID (Note 1)
Perform Erase or Program Operations
RESET = VIH
Temporary Sector Unprotection Completed (Note 2)
Notes: 1. All protected sectors are unprotected. 2. All previously protected sectors are protected once again.
Figure 22
Temporary Sector Unprotection Algorithm
46
MBM29LV017-80/-90/-12
FAST MODE ALGORITHM
Start
XXXH/AAH
XXXH/55H
Set Fast Mode
XXXH/20H
XXXH/A0H
Program Address/Program Data
Data Polling Device
Verify Byte? Yes No
No
In Fast Program
Increment Address
Last Address ? Yes Programming Completed
XXXH/90H Reset Fast Mode XXXH/F0H
Figure 23
Embedded ProgramTM Algorithm for Fast Mode
47
MBM29LV017-80/-90/-12
Start
RESET = VID
Wait to 4 s
Device is Operating in Temporary Sector Unprotection Mode
No
Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXH/60H
PLSCNT = 1
To Sector Protection Write 60H to Sector Address (A0 = VIL, A1 = VIH, A6 = VIL)
Increment PLSCNT
Wait to 150 s
To Verify Sector Protection Write 40H to Sector Address (A0 = VIL, A1 = VIH, A6 = VIL)
Setup Next Sector Address
Read from Sector Address (A0 = VIL, A1 = VIH, A6 = VIL) No No PLSCNT = 25? Yes Remove VID from RESET Write Reset Command Data = 01H? Yes Protect Other Sector ? No Remove VID from RESET Write Reset Command Yes
Device Failed
Sector Protection Completed
Figure 24
Extended Sector Protection Algorithm
48
MBM29LV017-80/-90/-12
s ERASE AND PROGRAMMING PERFORMANCE
Limits Parameter Min. Sector Erase Time Byte Programming Time Chip Programming Time Erase/Program Cycle -- -- -- 100,000 Typ. 1 8 16.8 -- Max. 10 300 50 -- sec s sec cycles Excludes programming time prior to erasure Excludes system-level overhead Excludes system-level overhead -- Unit Comments
s TSOP (I) PIN CAPACITANCE
Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ. 7.5 8 10 Max. 9.5 10 13 Unit pF pF pF
Note: Test conditions TA = 25C, f = 1.0 MHz
49
MBM29LV017-80/-90/-12
s PACKAGE DIMENSIONS
40-pin plastic TSOP(I) (FPT-40P-M06)
LEAD No.
1 40
Details of "A" part 0.15(.006) MAX 0.35(.014) MAX
INDEX "A"
0.15(.006)
20 21
0.25(.010)
0.150.05 (.006.002) 20.000.20 (.787.008) 18.400.20 (.724.008) 0.50(.0197) TYP 0.500.10 (.020.004) 10.000.20 (.394.008)
0.05(.002)MIN (STAND OFF) 1.10 -0.05 .043 -.002 (Mounting height)
+0.10 +.004
0.10(.004) 19.000.20 (.748.008)
9.50(.374) REF. 0.200.10 0.10(.004) (.008.004)
M
C
1994 FUJITSU LIMITED F40007S-1C-1
Dimensions in mm (inches).
40-pin plastic TSOP(I) (FPT-40P-M07)
LEAD No.
1 40
Details of "A" part 0.15(.006) MAX 0.35(.014) MAX
INDEX
"A"
0.15(.006)
20 21
0.25(.010)
19.000.20 (.748.008) 0.150.05 (.006.002) 0.10(.004)
0.500.10 (.020.004) 0.50(.0197) TYP
0.200.10 (.008.004)
0.10(.004)
M
9.50(.374) REF.
0.05(.002)MIN (STAND OFF)
18.400.20 (.724.008) 20.000.20 (.787.008)
10.000.20 (.394.008)
1.10 -0.05 .043 -.002 (Mounting height)
+0.10
+.004
C
1994 FUJITSU LIMITED F40008S-1C-1
Dimensions in mm (inches).
50
MBM29LV017-80/-90/-12
48-pin plastic FBGA (BGA-48P-M03)
9.000.20(.354.008)
Note: The actual shape of corners may differ from the dimension.
1.20(.047)MAX (Mounting height) 0.350.10(.014.004) (Stand off)
5.60(.221) 0.80(.031)NOM
6 0.80(.031) NOM 4.00(.157) 5 4 3 2 1 H G F E D C B A
8.000.20 (.315.008) INDEX
O0.400.10 (.016.004)
O0.08(.003)
M
0.10(.004)
C
1997 FUJITSU LIMITED B48003S-1C-2
Dimensions in mm (inches).
48-pin plastic FBGA (BGA-48P-M13)
9.000.20(.354.008)
Note: The actual shape of corners may differ from the dimension.
+0.15 +.006
1.05 -0.10 .041 -.004 (Mounting height) 0.380.10(.015.004) (Stand off)
5.60(.221) 0.80(.031)TYP
6 5 8.000.20 (.315.008) INDEX 4 4.00(.157) 3 2 1
H C0.25(.010)
G
F
E
D
C
B
A
M
48-O0.450.10 (48-.018.004)
O0.08(.003)
0.10(.004)
C
1998 FUJITSU LIMITED B480013S-1C-1
Dimensions in mm (inches).
51
MBM29LV017-80/-90/-12
FUJITSU LIMITED
For further information please contact:
Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka Nakahara-ku, Kawasaki-shi Kanagawa 211-8588, Japan Tel: 81(44) 754-3763 Fax: 81(44) 754-3329
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval. Any semiconductor devices have an inhereut chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.
http://www.fujitsu.co.jp/
North and South America FUJITSU MICROELECTRONICS, INC. Semiconductor Division 3545 North First Street San Jose, CA 95134-1804, USA Tel: (408) 922-9000 Fax: (408) 922-9179 Customer Response Center Mon. - Fri.: 7 am - 5 pm (PST) Tel: (800) 866-8608 Fax: (408) 922-9179
http://www.fujitsumicro.com/
Europe FUJITSU MIKROELEKTRONIK GmbH Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany Tel: (06103) 690-0 Fax: (06103) 690-122
http://www.fujitsu-ede.com/
Asia Pacific FUJITSU MICROELECTRONICS ASIA PTE LTD #05-08, 151 Lorong Chuan New Tech Park Singapore 556741 Tel: (65) 281-0770 Fax: (65) 281-0220
http://www.fmap.com.sg/
F9904 (c) FUJITSU LIMITED Printed in Japan
52

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